Abstract
We have studied long-wavelength emission in 1.3-μm optical communication range from nitrided InAs∕GaAs quantum dots (QDs). Atomic-layer nitridation just after the growth of InAs QDs realizes a remarkable redshift of the photoluminescence peak by more than 150nm. Growth temperature plays a key role in achieving room-temperature emission from the QDs. The emission wavelength can be adjusted by controlling the growth conditions of the initial InAs QDs. As compared with conventional QDs grown without nitridizing the QD surface, it is found that the nitridation results in larger dots with a large aspect ratio.
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