Abstract
Extended short-wave infrared (SWIR) avalanche photodiodes based on III–V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 μm and 2.75 μm, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed.
Highlights
That can be grown on it are technologically significant for extended wavelength infrared detectors: absorbers for the short and mid-wave infrared (SWIR and MWIR) spectral bands between 1.7 and 4.2 lm are permitted by InGaAsSb and InAsSb alloys, whilst at still longer wavelengths, either the InAs/GaSb or InAs/InAsSb strained layer superlattices (SLSs) material systems9 can be used, in principle
Extended short-wave infrared (SWIR) avalanche photodiodes based on III–V quaternary alloys were grown on GaSb
That can be grown on it are technologically significant for extended wavelength infrared detectors: absorbers for the short and mid-wave infrared (SWIR and MWIR) spectral bands between 1.7 and 4.2 lm are permitted by InGaAsSb and InAsSb alloys, whilst at still longer wavelengths, either the InAs/GaSb or InAs/InAsSb SLS material systems9 can be used, in principle
Summary
That can be grown on it are technologically significant for extended wavelength infrared detectors: absorbers for the short and mid-wave infrared (SWIR and MWIR) spectral bands between 1.7 and 4.2 lm are permitted by InGaAsSb and InAsSb alloys, whilst at still longer wavelengths, either the InAs/GaSb or InAs/InAsSb SLS material systems9 can be used, in principle.
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