Extended gate with source splitted tunnel field effect transistor for improved device performance

Abstract

A novel tunneling field effect transistor having extended gate with source(s) splitted (EG-SS-TFET) is proposed in this paper. The device physics of our proposed structure is compared with conventional L-shaped TFET for better device performance. The vertical band-to-band (B2B) tunneling in L-shaped structure is our motivation, which has been finetuned by gate extension (varied 2 nm to 6 nm) and splitted source (varied 2 nm to 10 nm). The gate extension results better tunneling at source-channel interface. The device models are simulated using two-dimensional numerical device simulator (Silvaco). The turn-on voltage of our proposed EG-SS-TFET is about 0.35 V lower than other established L-shaped TFET structures. The average Subthreshold Swing (SS) is recorded about 10 mV/decade lower than conventional L-shaped TFETs, resulting steep slope for fast switching applications.