Extended gate field effect transistor using V 2O 5 xerogel sensing membrane by sol–gel method

Abstract

Since the first use of glass electrode to the detection of pH, many efforts have been made to develop new techniques and methods. In this study, the pH sensing properties of an extended gate field effect transistor (EGFET) based on the vanadium pentoxide xerogel thin film is investigated. The vanadium pentoxide was prepared by a sol–gel route. The X-ray diffractogram indicates the presence of a lamellar structure of the vanadium pentoxide xerogel films. The film was investigated as a sensor in the pH range of 2–12 and the corresponding EGFET has a sensitivity of 58.1 mV/pH. This value suggests that the material is a promising candidate for applications as disposable biosensor.