Abstract
Layers of cadmium mercury telluride (CMT), formula CdxHg1 − xTe with x = 0.2 or 0.3, grown by metalorganic vapour phase epitaxy (MOVPE) on CdTe buffer layers over 2° off (001) towards [110]GaAs and by liquid phase epitaxy (LPE) on {111}B Cd0.96Zn0.04Te, have been examined by atomic force microscopy (AFM).LPE material was microscopically smooth with growth spirals centred on screw dislocations. The morphology of CdTe buffer layers on GaAs was affected by the choice of tellurium precursor. Uniform but microscopically rough buffers gave rise to CMT with faceted hillocks; microscopically smooth buffers with valleys and fissures gave rise to hillock-free CMT. It is conjectured that buffer layers in which defective areas grow at the same rate as their surroundings because no particular growth facet is favoured show microscopic roughness and hillocks in CMT grown subsequently, whereas those in which defective areas are suppressed show valleys with fissures but provide for good CMT growth.
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