Abstract
We investigated the hole emission processes of optically induced charges on the defectstates and confined states of self-assembled Ge quantum dots (QDs) embedded in a p–i–nSi diode. Optical deep level transient spectroscopy (ODLTS) and optical isothermalcapacitance transient spectroscopy (OICTS) were used to study the defect states in tenstacked Ge quantum dots. Using ODLTS and OICTS for QD-embedded samples, the peaksrelated to the defect states of Ge QDs could be classified distinctly; it was about 20–50times higher in intensity than that for the bulk defect states. The charges emitted from theQD defect state were observed near 93 K, and the activation energy was calculated to beEV+177 meV. The defect state followed the logarithmic capture kinetics and the Arrhenius-determinedapparent activation energy decreased in the band gap as the optical injection widthincreased. We suggest that Ge QD defect states in Si could exist as extended states.
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