Abstract
The capacitance and voltage (C-V) characteristics of metal, oxide, and silicon (MOS) capacitors passivated by PbO-based glasses with various water concentrations and with exposure to water vapor and to heating were investigated. As the OH −1 absorption coefficients of the glass increased, adverse effects on the recovery of hysteresis loops of C-V curve shifts were observed. Water vapor had an adverse effect on the hysteresis loops and ΔV G shifts of MOS capacitors, but they were somewhat improved, following heating at 400 °C for 1 h.
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