Abstract
It was found experimentally that polarizable capacitance versus voltage (C-V) characteristics for metal-oxide-silicon (MOS) capacitors, passivated by various oxide glasses, depend on molar polarizability for passivation glasses. Experimental data showed C-V curve shifts toward higher voltage were evidently caused by polarizable ions in glasses. The possibility for making a material choice in semiconductor device passivation was discussed, using the Poisson equation for the glass-passivated MOS capacitors.
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