Abstract
High quality Al2O3 thin film is grown by atomic layer deposition (ALD). The influence of growth parameters such as growth temperature and purge time on the surface morphology, dielectric constant and so on have been investigated. It is found that Al2O3 thin film at a flow rate of 150 sccm, H2O flow rate of 150 sccm, pulse time of 0.1 s, purge time of 6 s, cycle period of 450 times and growth temperature of 150°C, exhibits the optimal material quality with a growth rate of 0.79 Å/cycle, a root-square surface roughness (RMS) of 0.152 nm and a capacitance of 13.8 nf.
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