Exploring the interfacial structure and crystallinity for direct growth of Mn3Sn(0001) on sapphire (0001) by molecular beam epitaxy

Abstract

The Kagome antiferromagnet Mn3Sn has garnered a lot of attention due to the presence of interesting properties such as anomalous Hall effects and Nernst effects. Until now, few papers have been reported to grow using molecular beam epitaxy with a buffer layer or on other substrates. In this paper, we discuss the synthesis of crystalline Mn3Sn layers, prepared on Al2O3 (0001) without a buffer layer using molecular beam epitaxy. The growth is monitored in-situ using reflection high energy electron diffraction and measured ex-situ using X-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. The samples were deposited at 524 ± 5 °C, with an Mn: Sn atomic flux ratio of 3.2:1 for 90 min. Orientation relationships between the Mn3Sn films and the sapphire substrates are determined from in-plane and out-of-plane measurements. Our analysis indicates that the resulting film is predominantly c−plane oriented. Lastly, the samples prepared in this way were found to be discontiguous, showing a 3-dimensional morphology. According to first-principles calculations, the Mn3Sn exhibits a displaced Kagome structure in the very first stages of growth, for 2 ML and 4 ML growth on Al2O3 (0001). This result is corroborated by calculating the surface formation energies and explains the observed RHEED patterns.