Abstract
This paper reports the influence of thermal oxidation of Ga2O3 thin films deposited on titanium foil substrates via RF magnetron sputtering. The samples were characterized and subjected to photoelectrochemical analysis to assess their photocurrent density response. XRD spectra disclose Ti, TiO2), and Ga2O3 crystal phases. EDX analysis indicates that oxidation temperature reduces oxygen vacancies. Kubelka-Munk technique is used to estimate the optical band gap energies of the TiO2/Ga2O3. The band gap energy decreases from 2.39 to 1.99 and 2.14 eV for TG500 and TG600, whereas TG800 and TG700 increase to 2.98 and 3.09 eV. The TG500 disclosed the highest photocurrent density response of 1382 μAcm−1 at 1.2 V vs. Ag/AgCl in 0.5 M NaOH electrolyte, attributed to decreased oxygen vacancies and band gap. With the strong photocurrent response, stability, and repeatability, the samples may be useful in photocatalytic water-splitting applications for green hydrogen production.
Published Version
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