Exploring Intertwined quantum and cryogenic behaviour in ultra-scaled 10 nm MOSFET: a NEGF quantum ballistic simulation

Abstract

Silicon-based spin qubits have emerged as promising candidates for scalable quantum information processing. This study first time investigates the behaviour of ultra-scaled 10 nm gate length and 3 nm channel thickness nanoscale double gate metal-oxide semiconductor field-effect transistors (MOSFETs) over a broad temperature range, from deep cryogenic (4 K) to room temperature (300 K). Employing the Non-Equilibrium Green’s Function (NEGF) method, the research explores the intertwined quantum and cryogenic behaviours of the various quantum phenomena, including eigen energies, eigen-functions, electron concentration, current characteristics, and more. This comprehensive analysis sheds light on the intricate interplay of quantum effects in nanoscale transistors under deep cryogenic conditions, offering valuable insights into the development of cryo-CMOS circuits for quantum computing.