Abstract
Present study performs an extensive exploration of the profiles of DC-Kerr effect (DCKE) of doped GaAsquantum dot (QD) under the control of Gaussian white noise. A large number of important physical parameters have been varied over a range and the resultant changes in the DCKE profiles have been thoroughly analyzed. The said physical parameters comprise of electric field, magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1−xAs alloy QD), carrier density, relaxation time, position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The particular physical quantity being varied, presence of noise and its pathway of application, in combination, lead to emergence of diverse features in the DCKE profiles. As a technologically significant aspect we often find maximization of DCKE for some typical combinations as mentioned above. Presence of multiplicative noise, in general, causes greater shift and greater augmentation of DCKE profiles from a noise-free condition than its additive counterpart. The outcomes of the study indicate ample scope of tailoring DCKE of doped QD systems in presence of noise by minute adjustment of several control parameters.
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