Modulation of static dipole polarizability of impurity doped quantum dots in presence of noise

Abstract

Present study attempts to perform a rigorous exploration of the profiles of static dipole polarizability (SDP) of doped GaAs quantum dot (QD) under the supervision of Gaussian white noise. A good number of physical parameters have been varied over a range and the consequent variations in the SDP profiles have been meticulously monitored. The said physical parameters comprise of magnetic field, confinement potential, dopant location, dopant potential, noise strength, aluminium concentration (only for AlxGa1−xAs alloy QD), position-dependent effective mass (PDEM), position-dependent dielectric screening function (PDDSF), anisotropy, hydrostatic pressure (HP) and temperature. The SDP profiles reveal interesting features that heavily depend upon presence/absence of noise and also on the manner (additive/multiplicative) noise makes its entry to the system. As a general observation we have found that additive noise causes greater deviation of the SDP profile from noise-free state than its multiplicative counterpart. The outcomes of the study reflect significant scope of tailoring the SDP of doped QD in presence of noise by proper adjustment of several controlling parameters. The study deems importance in view of technological applications of QD devices where noise may play some anchoring role.