Abstract
We report here the two-dimensional layered material of MoS2/Bi2Se3 vdW heterostructures formed by ultrasonication of different concentrations of exfoliated MoS2 and Bi2Se3 nanosheets. The vdW heterostructures show unique optical characteristics compared to individual exfoliated nanosheets. The enhanced lifetime of heterostructures explained the charge transfer with increasing efficacy for producing optoelectronic devices. Raman spectroscopy confirms the presence of intrinsic Raman active modes of Bi2Se3, MoS2, and respective modes of vdW heterostructures. TEM images show characteristic lattice planes in both materials and clear overlapping regimes, confirming successful heterojunction formation. Further, Zeta potential confirms the enhanced stability of the heterostructures formed while the significant PL quenching, strongly suggests the presence of charge transfer processes within the heterostructures. Ultrafast pump-probe spectroscopy further confirms the non-linear charge transfer and relaxation mechanism of the heterostructures. We employed Surface Xplorer and Glotaran software for model fitting and Glotaran's global fitting revealed unresolved charge carrier dynamics.
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