Abstract
An infrared hot-electron transistor (IHET) corrugated array with a common base configuration was investigated and fabricated. The IHET structure provides a maximum factor of six in improvement in the photocurrent to dark current ratio, and hence it improved the array S/N ratio by the same factor. The study also showed that there is no electrical cross-talk among individual detectors, even though they share the same emitter and base contacts. It thus paves the way to high density sensitive focal plane arrays.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
