Abstract
A physical and explicit surface potential model for undoped symmetric double-gate polysilicon thin-film transistors has been derived based on an effective charge density approach of Poisson's equation with both exponential deep and tail state terms included. The proposed surface potential calculation is single-piece and eliminates the regional approach. Model predictions are compared to numerical simulations with close agreement, having absolute error in the millivolt range. Furthermore, expressions of the drain current are given for a wide range of operation regions, which have been justified by thorough comparisons with experimental data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
