Abstract
We focus on the floating body effects (FBEs) in narrow channel SOI MOSFETs such as saturation subthreshold swing, breakdown voltage and single transistor latch-up. We find that all improve as the channel width decreases and examine the mechanisms causing this improvement. We demonstrate experimently and by simulation, that the reduced FBEs in narrow channel devices are caused by dopant outdiffusion and lifetime reduction along the channel edges.
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