Explaining the luminescence profile of erbium in silicon under short excitation pulses

Abstract

A mechanism for the luminescence of erbium in silicon has been developed. Erbium atoms in silicon have been considered as recombination centers with specific values of capture and emission coefficients. Electron–hole recombination through these levels has been considered to be the origin of erbium excitation. Capture and emission processes of photo generated excess carriers in the erbium related level have been equated for non-steady-state conditions. The extended rise of erbium luminescence after termination of short excitation pulses of micro/nano second durations has been explained by the model.