Abstract
Origin of erbium luminescence in silicon-germanium at 1.54 micrometers at 1.54 micrometers has been analyzed. Erbium atoms have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. At steady state of excitation, a certain fraction of erbium sites were found to remain occupied by electrons. Trapped electrons, which eventually recombine with holes in the valence band, provide the energy for 4I15/2 yields 4I13/2 excitation well layers. Good agreement with experimental results on quenching of erbium luminescence has been achieved. Our model also explains the effect of higher erbium emission in silicon-germanium heterostructures when compared with bulk silicon under similar conditions.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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