Experimental study silicon low-dimensional structures for generation of THz radiation

Andrey Miakonkikh,Konstantin Rudenko,Petr Solyankin,Alexander Rogozhin,P Yermolov

doi:10.1051/itmconf/20193008012

Andrey Miakonkikh, Konstantin Rudenko + Show 3 more

Open Access

https://doi.org/10.1051/itmconf/20193008012

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Abstract

Capabilities of precision technologies for manufacturing on SOI wafers of silicon low-dimensional structures for terahertz generation are investigated. The design of diode device based on array of silicon nanowires or on ultrathin (<10 nm) silicon layer are proposed. This generating silicon diode includes nano-sized elements with ballistic transport of carriers, which is coupled to a metal antenna made from silicide layer.

Highlights

Silicon one-dimensional structures are promising for use in various nanoelectronic devices in nanoscale field-effect transistors, photonics structures, and quantum computing
The use of nanowire structures was investigated for biosensor applications, which make it possible to achieve sensitivity to single adsorbed atoms and molecules [1]
The development of technologies for the formation of an array of silicon nanowires is part of the work on the creation of THz range receivers and sources based on their early theoretical studies

Summary

Introduction

Silicon one-dimensional structures are promising for use in various nanoelectronic devices in nanoscale field-effect transistors, photonics structures, and quantum computing. Anisotropic plasma-chemical etching allows the formation of silicon structures with critical sizes up to 10 nm, but the defects created by ion bombardment lead to a significant decrease in the electron mobility in the formed one-dimensional silicon structures (nanowires). The output of terahertz oscillations generated in a low-dimensional BARITT diode is assumed through a planar spiral antenna made in a silicon layer of NiSi metal silicide. The contacts to it were fabricated by ultrafine high-dose doping of the Si contact areas with plasma-immersion ion implantation of boron, while the nanowires themselves remained unalloyed or lightly doped. To diminish the possible effect of the silicon substrate on the generation of THz vibrations in the nanowire structure, direct measurements of the transmission of terahertz radiation (0.25–2.5 THz) through the SOI plate were performed, and its insignificant (less than 3 cm–1) absorption in volume of lightly doped silicon substrate

Process of structure formation

Simulation of Defects profile

Results of electric measurements

Conclusion