Abstract
Thin films of Ti–Si–N were deposited by magnetron sputtering in an Ar–N2 gas mixture. The magnetron discharge was operated at 10 mTorr with less than 10% N2 in the gas mixture. The r.f. power varied from 100 to 200 W. The composition and resistivity of the thin films were determined by energy dispersive X-ray spectroscopy and the four-point probe method respectively. At low r.f. power the films were richer in nitrogen. The resistivity of the films varied from 250 to 1150 μΩ cm. Low resistivity films are obtained below 35 at.% nitrogen content. Furthermore, a Monte Carlo simulation previously developed for a W7Ti3 target was adapted to the Ti5Si3 target and used to determine the transport characteristics of the sputtered atoms. The results were compared with optical emission spectroscopy measurements of Ti and Si emission lines, revealing that the ejection cone from the target is wider for Ti atoms than for Si atoms.
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