Experimental study of temperature dependence of single-event upset in SRAMs

Abstract

We report on the temperature dependence of single-event upsets in the 215–353 K range in a 4M commercial SRAM manufactured in a 0.15-μm CMOS process, utilizing thin film transistors. The experimental results show that temperature influences the SEU cross section on the rising portion of the cross-sectional curve (such as the chlorine ion incident). SEU cross section increases 257 % when the temperature increases from 215 to 353 K. One of the possible reasons for this is that it is due to the variation in upset voltage induced by changing temperature.