Abstract
We have experimentally shown that percolating 2D electron systems based on Si-metal-nitride-oxide semiconductor structures with strong fluctuation potential reveal conductance quantization signatures up to room temperature, despite the sample sizes being in the micrometer range. The gate length of the structure was chosen to be comparable with the percolation correlation length, while its width is much bigger. Under high magnetic field action the structure shows positive magnetoresistance at gate voltages where the conductance G is lower than e2/h and negative at higher values. We have interpreted these effects in terms of a self-organized disordered structure in which the resistance is controlled by the conductance of a single fluctuation potential saddle point constriction having quantized values.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
