Abstract
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×10 15 cm -3 -doped epitaxial layer. Extensive simulations have been performed to design, optimize and analyze the structure of the FJ_JBS rectifier. The fabricated FJ_JBS shows that breakdown voltage (BV) and differential R on,sp are 3.4 kV, yielding the highest BV value reported for 4H-SiC FJ diodes, and 5.67 mΩ·cm 2 , respectively. Compared with the conventional JBS, the BV value of FJ_JBS increases by 33.3% and the R on,sp only slightly rises by 6.2%. The corresponding Baliga figure-of-merit (BFOM) (4 BV 2 /R on_sp ) of this FJ_JBS diode is 8.16 GW/cm 2 .
Highlights
4H-SiC power devices have received much attention for highpower applications due to the outstanding properties of this material, including its large critical electric field and high thermal conductivity [1]
There is a tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron−sp) for conventional Junction barrier Schottky (JBS) structure, constraining further improvements to device performance
The floating junction (FJ) structure has been applied to 4H-SiC power devices [4], [5]
Summary
4H-SiC power devices have received much attention for highpower applications due to the outstanding properties of this material, including its large critical electric field and high thermal conductivity [1]. Based on the analysis, we report the fabrication and experimental study of a high-performance 4H-SiC FJ_JBS rectifier adopting the designed epitaxial layer and termination structure.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
