Abstract
This paper demonstrates the trade-off relationship of forward voltage drop (V/sub F/) and leakage current (I/sub R/) of a junction-barrier-controlled Schottky (JBS) rectifier as compared to a conventional Schottky barrier rectifier (SBR). The JBS rectifier has been considered as a potential candidate for achieving low forward voltage drop (V/sub F/) while maintaining reasonable reverse characteristics for over a decade. However, to date, there is no definitive V/sub F/-I/sub R/ trade-off study of the JBS rectifier as compared to SBR at rated operating conditions. Our experimental results show that JBS has a V/sub F/-I/sub R/ trade-off advantage over SBR at low current density for an optimized process and device geometry; and almost no improvement is found at a current density used typically for a power Schottky rectifier.
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