Abstract

The performance of a semiconductor laser diode that has an asymmetric Mach–Zehnder interferometer all-optical switch in the cavity has been studied experimentally. This novel device was designed to be free from clock pulse insertion, since mode-locked optical pulses are generated internally and change the balance of the interferometer periodically. The device was fabricated using a InGaAsP/InP buried heterostructure and the primary optical properties of the device were investigated. Lasing characteristics that were peculiar to the twin-cavity structure were observed, i.e., continuous-wave lasing power oscillation in relation to the injection current balance between the two arms, and cyclic changes in the single/multiple emission peaks as a function of bias voltage at the saturable absorber. Electrical spectrum analysis indicated 40 GHz modulation of lasing output from the twin-cavity laser.

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