Abstract
We study the microwaave impedance of low-barrier Mott diodes with a $\delta $ -doped layer near the metal contact. Parameters of the elements of the diode equivalent circuit are determined and their dependences on the dc bias voltage are examined. The effects of injection of electrons into the i layer and their time delay in the potential well of the $\delta $ layer under a forward bias are discussed. An original method of the incoming test of epitaxial wafers and the diagnostics of their linear characteristics for the epitaxial structures intended for manufacturing of low-barrier Mott diodes is proposed.
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