Abstract
Recently we used the heavy ion microprobe of the Buenos Aires TANDAR Laboratory for Single Event Effects (SEE) and Total Dose (TD) experiments in electronics devices and components, requiring very low beam currents. The facility includes a fast beam switch that allows the control of the ion beam current and a mobile Si PIN (p-type, intrinsic, n-type) diode that directly measures the number of ions hitting the device. The fast beam deflector was used to reduce the current by producing a pulsed beam or generating a quasi-continuous (Poisson-like distributed) beam with currents ranging from tens to hundreds of ions/s. As an application for this current control method we present a single event effect (SEE) pulses map generated by a 32S8+ beam at 75 MeV on two 0.5 µm technology CMOS digital output buffers where the device was formed by cascading four CMOS inverters with increasing sizes from input to output to drive large loads. Using the same concept of pulse width modulated deflection, we developed a novel gradient scanning method. This system allows to produce in a single irradiation a distribution with a cumulative damage with a difference of two orders of magnitude at constant gradient. To demonstrate the method, we irradiated a lithium niobate monocrystal with 32S8+ beam at 75 MeV energy and later analyzed the produced damage by the micro-Raman technique and an optical profilometer.
Highlights
The Buenos Aires heavy ion nuclear microprobe facility MiP (Microhaz de iones Pesados) has been in operation for fourteen years
We present an experimental configuration mounted in the heavy ion microbeam line that allows us to conduct micro-PIXE analysis and quickly change to supplementary studies, like scanning transmission ion microscopy (STIM)
We present a system that allows to modify a heavy ion current in a fast, simple and completely electronically controlled way, based on an electrostatic deflector
Summary
The Buenos Aires heavy ion nuclear microprobe facility MiP (Microhaz de iones Pesados) has been in operation for fourteen years. The slit stability control used at the output of the bending magnet requires a beam of several nA to obtain a good signal for the feedback loop that controls the terminal voltage For this reason, the slit control system is not sensitive to low currents beams and it is not suitable for operating the machine under these conditions as it becomes very unstable. It is not feasible to inject low enough currents in the microbeam line, to obtain only closing slits, a stable beam with currents of a few tens of ions per second in the microbeam chamber This is possible in some machine’s working condition, it is very laborious and unstable for long measurement periods and the final current can become unpredictable. Ober-Ramstadt, Germany) connected to the electrostatic deflection plates in order to turn on the beam
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