Abstract
The mechanism of cw laser glazing has been systematically investigated. Epitaxial growth from the crystalline substrate is the dominant phenomenon during laser glazing. Two different mechanism of cw laser glazing on Fe-C-Si-B alloyed layer have been discovered, one is based on the epitaxial growth from the eutectic group matrix and the other is based on the eutectic hypermicro-crystalline matrix. The former requires the abrupt stop of the epitaxial growth during solidification for glass forming, which depends on eutectic composition, appropriate composition homogeneity, microstructure fineness, laser glazing power density and scanning velocity; the latter requires much lower critical laser power density and glazing velocity, which is capable of producing large area amorphous layer. Three sublayers in the bright layer were discovered: the upper sublayer is homogeneous nanocrystalline; the middle sublayer is metallic glass; and the lower sublayer is heterogeneous nanocrystalline.The mechanism of cw laser glazing has been systematically investigated. Epitaxial growth from the crystalline substrate is the dominant phenomenon during laser glazing. Two different mechanism of cw laser glazing on Fe-C-Si-B alloyed layer have been discovered, one is based on the epitaxial growth from the eutectic group matrix and the other is based on the eutectic hypermicro-crystalline matrix. The former requires the abrupt stop of the epitaxial growth during solidification for glass forming, which depends on eutectic composition, appropriate composition homogeneity, microstructure fineness, laser glazing power density and scanning velocity; the latter requires much lower critical laser power density and glazing velocity, which is capable of producing large area amorphous layer. Three sublayers in the bright layer were discovered: the upper sublayer is homogeneous nanocrystalline; the middle sublayer is metallic glass; and the lower sublayer is heterogeneous nanocrystalline.
Published Version
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