Abstract
This article presents reliability studies of single polysilicon electrically erasable programmable read-only memory (EEPROM) cells at temperatures from 50°C to 450°C. The technically challenging measurements at elevated temperatures >250°C have been carried out for accelerated reliability studies. Furthermore, a SPICE macro model has been extended to the wide temperature range to describe the retention and endurance performance of the memory cell and to enable a better insight into the physics involved.
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