Abstract
Electron beam irradiation during scanning transmission electron microscopy has been used to probe the relative abundance and stabilities of gadolinium adsorption sites in polycrystalline silicon nitride ceramics. Site-specific binding strengths in the interface plane between β-Si3N4 grains and the adjacent amorphous triple pockets were found to be consistent with theoretical predictions. Decreasing stability was found for Gd within partially ordered planes further from the interface. Atomic level characterization such as that reported here provides detailed insights that will allow one to tailor new functional ceramic microstructures with improved macroscopic mechanical properties.
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