Abstract
AbstractA GaN/AlGaN multiple-quantum-well structure based on an asymmetric triple-quantum-well repeat unit was grown by molecular beam epitaxy, and its vertical electrical transport characteristics were investigated as a function of temperature. To minimize the density of dislocations and other structural defects providing leakage current paths, homoepitaxial growth on a free-standing GaN substrate was employed. The measured vertical-transport current-voltage characteristics were found to be highly nonlinear, especially at low temperatures, consistent with sequential tunneling through the ground-state subbands of weakly coupled adjacent quantum wells. Furthermore, different turn-on voltages were measured depending on the polarity of the applied bias, in accordance with the asymmetric subband structure of the sample repeat units.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call