Abstract
Bismuth oxide thin films have been produced from the precursor of triphenyl bismuth and ozone by using the atomic layer deposition (ALD) technique. The growth rate of 0.23Å/cycle is independent to deposition temperature at the range of 250°C to 320°C, and the self-limiting saturated adsorption of ALD for bismuth-source and oxygen-source precursors was verified. The films obtained in the ALD window (between 250°C and 320°C) have an indirect band gap of ~2.77eV that is compatible with Bi2O3−δ. High-resolution transmission electron microscopy reveals a mixed growth mode, horizontal growth initially, and subsequent vertical/island growth during the deposition process.
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