Abstract
The dependence of the spreading velocity of the turned-on state in a thyristor on the load current density is measured in the presence of a turn-off gate current as well as without it. For the same thyristor the critical charge density n c and the dependence of turn-on time constant τ 1 of turned-off parts of the thyristor on the load current density j a flowing through the turned-on part are also measured. The data obtained make it possible to compare in detail the experimental results with the recently proposed phenomenological theory of the spreading of the turned-on state. Our investigations show that the theory describes well all the experimental results. The τ 1( j a ) dependence is of great importance in the spreading of the turned-on state. The inhomogeneities of the critical charge density n c at different points of the structure have a considerable influence on the condition of the spread. The data obtained improve the understanding of the turn-on process and allow to calculate the spreading velocity of the turned-on state in thyristors.
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