Abstract
We report a detailed experimental study of the transverse electric, field in charge-coupled devices. Using a gate-controlled photodiode structure, the effects of doping density, oxide thickness, gate length and gate voltage on the transverse electric field are examined and compared with theoretical calculations. It is found that the existing theoretical model tends to overestimate the transverse field in samples of high doping density and large gate length, or when the gate voltage difference is large.
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