Abstract
The effects of post-deposition annealing process on the material and electrical properties of radio frequency (RF) reactive magnetron sputter-deposited Bi2Mg2/3Nb4/3O7 (BMN) dielectric films integrated with silicon were investigated. All post-deposition annealed samples show the presence of a silicate-type amorphous interfacial layer. The films show smooth, continuous, crack-free surfaces and preserve an amorphous phase up to an annealing temperature of 700 °C. The samples subjected to rapid thermal annealing in O2 ambient and subsequently in N2 ambient exhibit enhanced electrical characteristics, such as low values of capacitance equivalent thickness, interface state density, trap oxide charge density, reduced hysteresis and frequency dispersion, low leakage current, together with high electric field breakdown. These values are comparable to those of some of the most widely investigated high-k gate dielectrics.
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