Experimental investigation and modeling of electrical properties for phenol red thin film deposited on silicon using back propagation artificial neural network

Abstract

A heterojunction of a thin film of phenol red and silicon was constructed by applying the thermal evaporation technique. The current-voltage (I-V) characteristics of phenol red/Si heterojunction were studied experimentally and theoretically in the temperature range from 303 to 353 K. The thermionic emission mechanism for the conduction was established from the forward bias current density-voltage characteristics. The behavior of both the ideality factor and series resistance was deduced. The barrier height (φ) was determined as 0.26 eV. The reverse bias voltage exposed a thermally motivated behavior. Modeling of electric current in terms of voltage and temperature was carried out using an artificial neural network (ANN model) that depends on the experimental data. The learning ANN method was applied based on trial and error technique. The optimum network architect which represents the most satisfactory performance was obtained. The simulation and prediction results of the ANN model offered a high-reaching accuracy in comparison with experimental data. The ANN model utilized as an active tool to estimate the electrical properties of heterojunction for organic compounds.