Abstract

Successful combination of high gain and high saturation output power performance in a GaAs/AlGaAs quantum well travelling wave amplifier is reported. Comparable performance to similar 1.5 mu m InGaAs/InP devices is achieved, surpassing expectations. A device with a three quantum well active region and separately confined heterostructure design has both a small signal gain of 22.9 dB and a saturation output power of 40 mW at the low drive current of 40 mA. >

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.