Abstract
Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation is provided by using modified charge-pumping (CP) techniques. The original distribution of interface traps and bulk traps of pure HfO 2 and HfO 2/LaOx dielectric stack are extracted and compared by CP techniques. It is found that devices with HfO 2/LaOx dielectric stack have higher interface trap but lower bulk trap density than those with pure HfO 2. Especially, device with HfO 2/LaOx dielectric stack is highly resistant to constant voltage stress, which can be attributed to the suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation.
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