Abstract
In this study, we propose a new experimental technique to study the transport properties of stress-induced leakage current (SILC), where the energy of electrons in SILC can be evaluated directly, utilizing the carrier separation measurement. It is found that electrons in SILC lose the energy by around 1.5 eV during tunneling through gate oxides. It is demonstrated that a new carrier transport model including the large energy relaxation describes the experimental I-V characteristics of SILC successfully.
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