Experimental evidence of inelastic tunneling in stress-induced leakage current

Abstract

We propose a new experimental technique to study the transport properties of stress-induced leakage current (SILC). Based on the carrier separation measurement for p-channel MOSFETs, the quantum yield of impact ionization for electrons involved in the SILC process is evaluated directly from the change in the source and gate currents of p-MOSFETs before and after stressing. Since the relationship between the electron energy and the quantum yield is established for direct and FN tunneling currents, the electron energy of electrons involved in the SILC process can be determined from the quantum yield. The results reveal that the measured energy of electrons in the SILC process is lower roughly by 1.5 eV than the energy expected in the elastic tunneling process. Trap-assisted inelastic tunneling model is proposed as a conduction mechanism of SILC accompanied by energy relaxation. It is shown, through the evaluation of the substrate hole current in n-channel MOSFETs, that the contribution of trap-assisted valence electron tunneling, another possible mechanism to explain the energy relaxation, to SILC is small.