Abstract
The influence of the interface morphology upon the electron–hole transport in intrinsic In0.53Ga0.47As/InP quantum structures was investigated by scanning the photoluminescence intensity profile on the sample surface. The results suggest that the carrier diffusion is very sensitive both to the roughness of the interfaces and the presence of finite-width terraces. It was found that the carrier density profile shows asymmetric diffusion normal to the terraces whereas it shows symmetric expansion along the terraces. Simulations of the asymmetry in the carrier density profile using a non-Fickian diffusion equation described by the Lévy statistics show a excellent agreement with the experimental data.
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