Abstract
Gate-control characteristics of photoluminescence (PL) were investigated for InGaAs quantum well (QW) and ridge quantum wire (QWR) structures grown by molecular beam epitaxy (MBE). Semi-transparent Au Schottky gates were formed on sample surfaces. Large modulations of PL intensity were seen for both QWR and QWs with different gate-voltage dependence. The results were explained in terms of electric field sweeping of photo-generated carriers.
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