Experimental evidence for zero-correlation-energy deep defects in intrinsic hydrogenated amorphous silicon.

Abstract

Depletion-width-modulated ESR spectroscopy together with junction-capacitance techniques yield the total spin and charge change associated with the emission of electrons from deep defects (D) in intrinsic a-Si:H samples. The predominant transition is from the D 0 to D + charge state near midgap. However, the magnitude of spin to charge change agrees with a nearly zero value of correlation energy between the singly and doubly occupied charge states