Abstract
We have fabricated ultrathin $\mathrm{YB}{\mathrm{a}}_{2}\mathrm{C}{\mathrm{u}}_{3}{\mathrm{O}}_{7--x}$ nanowires with a high critical current density and studied their voltage switching behavior in the 4.2--90 K temperature range. A comparison of our experimental data with theoretical models indicates that, depending on the temperature and nanowire cross section, voltage switching originates from two different mechanisms: hotspot-assisted suppression of the edge barrier by the transport current and the appearance of phase-slip lines in the nanowire. Our observation of hotspot-assisted voltage switching is in good quantitative agreement with predictions based on the Aslamazov-Larkin model for an edge barrier in a wide superconducting bridge.
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