Abstract
We performed photoinduced inverse spin-Hall effect (ISHE) measurements on Si-doped bulk GaAs at room temperature. The spin current is optically injected in the sample by means of circularly polarized light and is detected through spin-dependent scattering by Si impurities, which provide an electromotive field ${\mathbf{E}}_{\mathrm{ISHE}}$ close to the sample surface. We measured the ISHE signal as a function of the incident photon energy, and we determined the corresponding averaged spin current, flowing through the sample, to experimentally determine the spin-Hall conductivity.
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