Abstract
High-resolution low-energy electron diffraction measurements of the step structure of vicinal Si(001) as a function of both miscut angle and temperature are analyzed in terms of a one-dimensional model describing an S B step moving in the potential existing between two straight S A steps. The model includes kink and corner energies plus a generic strain potential caused by the surface reconstruction and the rebonding of atoms at the steps. Fits to the data confirm that the strength of the direct step-step interaction between steps increases continuously as the mean terrace width diminishes
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