Abstract

A three phase shifted (3PS) distributed feedback (DFB) semiconductor laser based on Reconstruction-Equivalent-Chirp (REC) technique is experimentally demonstrated for the first time. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as that of the true 3PS laser. However, it only changes the μm-level sampling structures but the seed grating is uniform. So, its cost of fabrication is low. The measurement results exhibit its good single longitudinal mode (SLM) operation even at high bias current and surrounding temperature.

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