Study on the high-power DFB semiconductor laser based on sampled moiré grating

Abstract

We review a new kind of distributed feedback (DFB) semiconductor laser based on sampled moire grating (SMG). It has some significant advantages such as good singlelongitudinal-mode (SLM) operation, suppressing spatial hole burning and compact structure. A four-channel DFB laser array based on SMG has been experimentally demonstrated. When the injected current exceeds 400 mA, the output power of the SMG-DFB laser array is more than 120 mW. However, the random facet phase induced by facet coatings can decrease the SLM yield and change the lasing wavelength. We proposed a method to improve the single mode stability via replacing the high-reflectivity coating with anti-reflection coated integrated grating reflector. The proposed high-power SLM DFB semiconductor laser and laser array may be beneficial for the silicon photonic chips that suffer from high light scattering loss.